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IRF540N 100V Single N-Channel HEXFET Power Mosfet TO-220AB IR

• Advanced Process Technology
• Ultra low On-Resistance
• Dynamic dv/dt Rating
• 175c Operating Temperature
• Fast Switching
• N-Channel Fully Avalanche Rated
• V=100V
• Lead-Free

Advanced HEXFE Power MOSFET is from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per siliconarea. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for provides the designer with an extremely efficient and reliable device for use in a wide varety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contrbute to its wide acceptance throughout the industry.

NEW AND ORIGINAL!